Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation

Cyril P. Sadia; Lorenzo P. Lopez; Ramon M. delos Santos; Joselito E. Muldera; Alexander E. De Los Reyes; Mae Agatha C. Tumanguil; Christopher T. Que; Valynn Katrine Mag-usara; Masahiko Tani; Armando S. Somintac; Elmer S. Estacio; Arnel A. Salvador

doi:10.1016/j.tsf.2017.12.022

Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation

Cyril P. Sadia
, Lorenzo P. Lopez
, Ramon M. delos Santos
, Joselito E. Muldera
, Alexander E. De Los Reyes
, Mae Agatha C. Tumanguil
, Christopher T. Que
, Valynn Katrine Mag-usara
, Masahiko Tani
, Armando S. Somintac
, Elmer S. Estacio
, Arnel A. Salvador

Department of Physics

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	46-49
Number of pages	4
Journal	Thin Solid Films
Volume	648
DOIs	https://doi.org/10.1016/j.tsf.2017.12.022
State	Published - Feb 28 2018

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Keywords

III-V semiconductors
Indium arsenide
Molecular beam epitaxy
Terahertz

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10.1016/j.tsf.2017.12.022

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Sadia, C. P., Lopez, L. P., delos Santos, R. M., Muldera, J. E., De Los Reyes, A. E., Tumanguil, M. A. C., Que, C. T., Mag-usara, V. K., Tani, M., Somintac, A. S., Estacio, E. S., & Salvador, A. A. (2018). Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation. Thin Solid Films, 648, 46-49. https://doi.org/10.1016/j.tsf.2017.12.022

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title = "Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation",

keywords = "III-V semiconductors, Indium arsenide, Molecular beam epitaxy, Terahertz",

author = "Sadia, \{Cyril P.\} and Lopez, \{Lorenzo P.\} and \{delos Santos\}, \{Ramon M.\} and Muldera, \{Joselito E.\} and \{De Los Reyes\}, \{Alexander E.\} and Tumanguil, \{Mae Agatha C.\} and Que, \{Christopher T.\} and Mag-usara, \{Valynn Katrine\} and Masahiko Tani and Somintac, \{Armando S.\} and Estacio, \{Elmer S.\} and Salvador, \{Arnel A.\}",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2018",

month = feb,

day = "28",

doi = "10.1016/j.tsf.2017.12.022",

language = "English",

volume = "648",

pages = "46--49",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation

AU - Sadia, Cyril P.

AU - Lopez, Lorenzo P.

AU - delos Santos, Ramon M.

AU - Muldera, Joselito E.

AU - De Los Reyes, Alexander E.

AU - Tumanguil, Mae Agatha C.

AU - Que, Christopher T.

AU - Mag-usara, Valynn Katrine

AU - Tani, Masahiko

AU - Somintac, Armando S.

AU - Estacio, Elmer S.

AU - Salvador, Arnel A.

PY - 2018/2/28

Y1 - 2018/2/28

KW - III-V semiconductors

KW - Indium arsenide

KW - Molecular beam epitaxy

KW - Terahertz

UR - https://www.scopus.com/pages/publications/85044375510

UR - https://www.scopus.com/pages/publications/85044375510#tab=citedBy

U2 - 10.1016/j.tsf.2017.12.022

DO - 10.1016/j.tsf.2017.12.022

M3 - Article

AN - SCOPUS:85044375510

SN - 0040-6090

VL - 648

SP - 46

EP - 49

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation

ASJC Scopus Subject Areas

Keywords

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