Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation

Cyril P. Sadia; Lorenzo P. Lopez; Ramon M. delos Santos; Joselito E. Muldera; Alexander E. De Los Reyes; Mae Agatha C. Tumanguil; Christopher T. Que; Valynn Katrine Mag-usara; Masahiko Tani; Armando S. Somintac; Elmer S. Estacio; Arnel A. Salvador

doi:10.1016/j.tsf.2017.12.022

Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation

Cyril P. Sadia, Lorenzo P. Lopez, Ramon M. delos Santos, Joselito E. Muldera, Alexander E. De Los Reyes, Mae Agatha C. Tumanguil, Christopher T. Que, Valynn Katrine Mag-usara, Masahiko Tani, Armando S. Somintac, Elmer S. Estacio, Arnel A. Salvador

Department of Physics

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	46-49
Number of pages	4
Journal	Thin Solid Films
Volume	648
DOIs	https://doi.org/10.1016/j.tsf.2017.12.022
State	Published - Feb 28 2018

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Keywords

III-V semiconductors
Indium arsenide
Molecular beam epitaxy
Terahertz

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10.1016/j.tsf.2017.12.022

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Sadia, C. P., Lopez, L. P., delos Santos, R. M., Muldera, J. E., De Los Reyes, A. E., Tumanguil, M. A. C., Que, C. T., Mag-usara, V. K., Tani, M., Somintac, A. S., Estacio, E. S., & Salvador, A. A. (2018). Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation. Thin Solid Films, 648, 46-49. https://doi.org/10.1016/j.tsf.2017.12.022

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title = "Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation",

keywords = "III-V semiconductors, Indium arsenide, Molecular beam epitaxy, Terahertz",

author = "Sadia, {Cyril P.} and Lopez, {Lorenzo P.} and {delos Santos}, {Ramon M.} and Muldera, {Joselito E.} and {De Los Reyes}, {Alexander E.} and Tumanguil, {Mae Agatha C.} and Que, {Christopher T.} and Mag-usara, {Valynn Katrine} and Masahiko Tani and Somintac, {Armando S.} and Estacio, {Elmer S.} and Salvador, {Arnel A.}",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2018",

month = feb,

day = "28",

doi = "10.1016/j.tsf.2017.12.022",

language = "English",

volume = "648",

pages = "46--49",

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T1 - Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation

AU - Sadia, Cyril P.

AU - Lopez, Lorenzo P.

AU - delos Santos, Ramon M.

AU - Muldera, Joselito E.

AU - De Los Reyes, Alexander E.

AU - Tumanguil, Mae Agatha C.

AU - Que, Christopher T.

AU - Mag-usara, Valynn Katrine

AU - Tani, Masahiko

AU - Somintac, Armando S.

AU - Estacio, Elmer S.

AU - Salvador, Arnel A.

PY - 2018/2/28

Y1 - 2018/2/28

KW - III-V semiconductors

KW - Indium arsenide

KW - Molecular beam epitaxy

KW - Terahertz

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UR - http://www.scopus.com/inward/citedby.url?scp=85044375510&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2017.12.022

DO - 10.1016/j.tsf.2017.12.022

M3 - Article

AN - SCOPUS:85044375510

SN - 0040-6090

VL - 648

SP - 46

EP - 49

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation

ASJC Scopus Subject Areas

Keywords

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