Dynamics of Optically-Generated Carriers in Si (100) and Si (111) Substrate-Grown GaAs/AlGaAs Core-Shell Nanowires

Ramon delos Santos; Jasher John Ibañes; Maria Herminia Balgos; Rafael Jaculbia; Jessica Pauline Afalla; Michelle Bailon-Somintac; Elmer Estacio; Arnel Salvador; Armando Somintac; Christopher Que; Satoshi Tsuzuki; Kohji Yamamoto; Masahiko Tani

doi:10.1186/s11671-015-1050-9

Dynamics of Optically-Generated Carriers in Si (100) and Si (111) Substrate-Grown GaAs/AlGaAs Core-Shell Nanowires

Ramon delos Santos
, Jasher John Ibañes
, Maria Herminia Balgos
, Rafael Jaculbia
, Jessica Pauline Afalla
, Michelle Bailon-Somintac
, Elmer Estacio
, Arnel Salvador
, Armando Somintac
, Christopher Que
, Satoshi Tsuzuki
, Kohji Yamamoto
, Masahiko Tani

Department of Physics

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	337
Journal	Nanoscale Research Letters
Volume	10
Issue number	1
DOIs	https://doi.org/10.1186/s11671-015-1050-9
State	Published - Dec 22 2015

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics

Keywords

Infrared and Raman spectra of III-V semiconductors
Molecular beam epitaxy
Optical properties of nanowires
Optical properties of semiconductors
Semiconducting gallium arsenide
Time-resolved spectroscopy

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10.1186/s11671-015-1050-9

Cite this

delos Santos, R., Ibañes, J. J., Balgos, M. H., Jaculbia, R., Afalla, J. P., Bailon-Somintac, M., Estacio, E., Salvador, A., Somintac, A., Que, C., Tsuzuki, S., Yamamoto, K., & Tani, M. (2015). Dynamics of Optically-Generated Carriers in Si (100) and Si (111) Substrate-Grown GaAs/AlGaAs Core-Shell Nanowires. Nanoscale Research Letters, 10(1), Article 337. https://doi.org/10.1186/s11671-015-1050-9

delos Santos, R, Ibañes, JJ, Balgos, MH, Jaculbia, R, Afalla, JP, Bailon-Somintac, M, Estacio, E, Salvador, A, Somintac, A, Que, C, Tsuzuki, S, Yamamoto, K & Tani, M 2015, 'Dynamics of Optically-Generated Carriers in Si (100) and Si (111) Substrate-Grown GaAs/AlGaAs Core-Shell Nanowires', Nanoscale Research Letters, vol. 10, no. 1, 337. https://doi.org/10.1186/s11671-015-1050-9

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keywords = "Infrared and Raman spectra of III-V semiconductors, Molecular beam epitaxy, Optical properties of nanowires, Optical properties of semiconductors, Semiconducting gallium arsenide, Time-resolved spectroscopy",

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doi = "10.1186/s11671-015-1050-9",

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T1 - Dynamics of Optically-Generated Carriers in Si (100) and Si (111) Substrate-Grown GaAs/AlGaAs Core-Shell Nanowires

AU - delos Santos, Ramon

AU - Ibañes, Jasher John

AU - Balgos, Maria Herminia

AU - Jaculbia, Rafael

AU - Afalla, Jessica Pauline

AU - Bailon-Somintac, Michelle

AU - Estacio, Elmer

AU - Salvador, Arnel

AU - Somintac, Armando

AU - Que, Christopher

AU - Tsuzuki, Satoshi

AU - Yamamoto, Kohji

AU - Tani, Masahiko

PY - 2015/12/22

Y1 - 2015/12/22

KW - Infrared and Raman spectra of III-V semiconductors

KW - Molecular beam epitaxy

KW - Optical properties of nanowires

KW - Optical properties of semiconductors

KW - Semiconducting gallium arsenide

KW - Time-resolved spectroscopy

UR - https://www.scopus.com/pages/publications/84939801532

UR - https://www.scopus.com/pages/publications/84939801532#tab=citedBy

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DO - 10.1186/s11671-015-1050-9

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SN - 1931-7573

VL - 10

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

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M1 - 337

ER -

Dynamics of Optically-Generated Carriers in Si (100) and Si (111) Substrate-Grown GaAs/AlGaAs Core-Shell Nanowires

ASJC Scopus Subject Areas

Keywords

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